BIDW40N65ES5
- 类别： IGBT
- 属性： TO-247
The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower RTH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.
Conflict Mineral Source Reporting for Insulated Gate Bipolar Transistors (IGBTs): CMRT
Specifications 规格
| Package 包 | TO-247 |
| Feature 特征 | Efficient Medium Speed 高效中速 |
| VCE [V] | 650 |
| IC @ T=100 ˚C [A] IC @ T=100 °C [A] | 40 |
| Typ. VCE(sat) @ Ic, Vge=15 V [V] 典型值 VCE（sat） @ Ic，Vge=15 V [V] | 1.35 |
| IF @ T=100 ˚C [A] IF @ T=100 °C [A] | 40 |
| Operating Junction Temperature 工作结温 | –40 °C to +175 °C –40 °C 至 +175 °C |